PART |
Description |
Maker |
IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDY10S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDY15S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDT12S60C-08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies A...
|
IDH06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDD06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDT12S60C IDT12BS60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies A... Infineon Technologies AG
|
IDC08S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|